Abstract & Overview
A new nanotechnology approach to create a nanoporous silicon layers by low-energy high-dose metal-ion implantation is demonstrated. Ag-ion implantation into monocrystalline silicone substrate at energy 30 keV with doses from 7.5×1016 to 1.5×1017 ion/cm2 was carried out. Surface nanoporous structures were studied by scanning electron microscope imaging and energy-dispersive X-ray analysis. For the first time it is shown that nanoporous silicon were formed by Ag-ion implantation. The average sizes of porous holes and thickness of walls between porous are about 110-130 and 30-60 nm, respectively. The formation of silver nanoparticles with average size of 5-10 nm inside porous silicon structures was detected. Thus, ion implantation is suggested to be used for a fabrication of naoporous layer structure, which could be easily combined with the silicon matrix for various applications.